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PD- 93842B
SMPS MOSFET
Applications High Frequency DC-DC Converters with Synchronous Rectification
IRF7455
HEXFET(R) Power MOSFET
l
VDSS
30V
RDS(on) max
0.0075
ID
15A
Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current
l
S S S G
1
8 7
A A D D D D
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 12 15 12 120 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/C C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
50
Units
C/W
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers 1
4/20/00
Notes through are on page 8
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IRF7455
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.029 --- V/C Reference to 25C, ID = 1mA 0.00600.0075 VGS = 10V, ID = 15A 0.0069 0.009 VGS = 4.5V, ID = 12A 0.010 0.020 VGS = 2.8V, ID = 3.5A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 24V, VGS = 0V A --- 100 VDS = 24V, VGS = 0V, T J = 125C --- 200 VGS = 12V nA --- -200 VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 44 --- --- --- --- --- --- --- --- --- --- Typ. --- 37 8.9 13 17 18 51 44 3480 870 100 Max. Units Conditions --- S VDS = 10V, ID = 15A 56 ID = 15A 13 nC VDS = 24V 20 VGS = 5.0V, --- VDD = 15V --- ID = 1.0A ns --- RG = 6.0 --- VGS = 4.5V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
200 15 0.25
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 64 99 2.5 A 120 1.2 96 150 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.5A, VGS = 0V TJ = 25C, IF = 2.5A di/dt = 100A/s
D
S
2
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IRF7455
1000
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
100
2.5V
20s PULSE WIDTH TJ = 150 C
1 10 100
2.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
10 0.1
10 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
ID = 15A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
1.5
100
1.0
TJ = 150 C
TJ = 25 C
V DS = 15V 20s PULSE WIDTH 2.6 2.8 3.0 3.2 3.4
0.5
10 2.4
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF7455
6000
VGS, Gate-to-Source Voltage (V)
5000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12
ID = 15A
VDS = 24V
10
C, Capacitance (pF)
4000
8
Ciss
3000
6
2000
4
Coss
1000
2
0 1
Crss
10 100
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 150 C
I D , Drain Current (A)
100
100
10us
10
100us
TJ = 25 C
1
10
1ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2
1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7455
16
VDS VGS
RD
D.U.T.
+
I D , Drain Current (A)
12
RG
- VDD
10V
8
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
Thermal Response (Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01 P DM t1
0.1
SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10
t2
0.01 0.00001
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7455
R DS (on) , Drain-to-Source On Resistance ( )
R DS(on) , Drain-to -Source On Resistance ( )
0.008
0.012
VGS = 4.5V 0.007
0.010
0.006
ID = 15A
0.008
VGS = 10V
0.005 0 20 40 60 80 100 120 ID , Drain Current (A)
0.006 2.5 3.0 3.5 4.0 4.5
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
500
EAS , Single Pulse Avalanche Energy (mJ)
VG
VGS
3mA
TOP
400
Charge
IG ID
BOTTOM
ID 6.7A 9.5A 15A
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
300
200
15V
V (B R )D S S tp VD S L DRIVER
100
RG 20 V IAS tp
D.U .T IA S 0.0 1
+ V - DD
0 25 50 75 100 125 150
A
Starting TJ , Junction Temperature ( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7455
SO-8 Package Details
D -B -
D IM
5
IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157
M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99
A
6 5 H 0.2 5 (.0 10 ) M AM
5
8 E -A -
7
A1 B C D E e e1 H K
0 .10 (.00 4) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 45
.050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8
1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8
-CB 8X 0 .25 (.01 0) A1 M CASBS
L
R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X
N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
6 .46 ( .25 5 )
1 .78 (.07 0) 8X
1.27 ( .0 50 ) 3X
SO-8 Part Marking
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7
IRF7455
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 ) 1 1.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00 (12.992) M AX .
14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25C, L = 1.8mH
RG = 25, IAS = 15A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00
8
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